Experimental analysis on stochastic behavior of preswitching time in STT-MRAM

Failure and reliability analysis of STT-MRAM

Spin Transfer Torque Magnetic RAM (STT-MRAM) promises low power, great miniaturization prospective (e.g. 22 nm) and easy integration with CMOS process. It becomes actually a strong non-volatile memory candidate for both embedded and standalone applications. However STT-MRAM suffers from important failure and reliability issues compared with the conventional solutions based on magnetic field swi...

Spin-Transfer Torque MRAM (STT-MRAM): Challenges and Prospects

Spin-transfer torque (STT) switching demonstrated in submicron sized magnetic tunnel junctions (MTJs) has stimulated considerable interest for developments of STT switched magnetic random access memory (STT-MRAM). Remarkable progress in STT switching with MgO MTJs and increasing interest in STTMRAM in semiconductor industry have been witnessed in recent years. This paper will present a review o...

Cascaded Channel Model and Analysis for STT-MRAM

Spin-torque transfer magnetic random access memory (STTMRAM) is a promising emerging non-volatile memory (NVM) technology which shows high potential for replacing the dynamic random access memory (DRAM), as well as for various embedded applications. However, STT-MRAM suffers from process variation induced variations of the access transistor size, the magnetic tunneling junction (MTJ) geometry a...

Stateful STT-MRAM- Based Logic for Beyond–Von Neumann Computing

Couture: Tailoring STT-MRAM for Persistent Main Memory

Modern computer systems rely extensively on dynamic random-access memory (DRAM) to bridge the performance gap between on-chip cache and secondary storage. However, continuous process scaling has exposed DRAM to high off-state leakage and excessive power consumption from frequent refresh operations. Spintransfer torque magnetoresistive RAM (STT-MRAM) is a plausible replacement for DRAM, given it...